View TPCS821007_4127224.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

TPCS8210
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TPCS8210
Lithium Ion Battery Applications
* * * * * * Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 19 m (typ.) High forward transfer admittance: |Yfs| = 9.2 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 A) Common drain Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rating 20 20 12 5 20 1.1 W 0.75 Unit V V V A
JEDEC JEITA TOSHIBA
2-3R1E
Drain power dissipation Single-device value (t = 10 s) (Note 2a) at dual operation (Note 3b) Single-device Drain power operation (Note 3a) dissipation Single-device value (t = 10 s) (Note 2b) at dual operation (Note 3b) Single pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range
Single-device operation (Note 3a)
Weight: 0.035 g (typ.)
0.6 W 0.35
Circuit Configuration
8 7 6 5
32.5 5 0.075 150 -55~150
mJ A mJ C C 1 2 3 4
Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2007-01-16
TPCS8210
Thermal Characteristics
Characteristics Single-device operation (Note 3a) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 114 C/W 167 Unit
Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Single-device value at dual operation (Note 3b)
Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Single-device value at dual operation (Note 3b)
Single-device operation (Note 3a)
208 C/W 357
Marking (Note 6)
Part No. (or abbreviation code)
S8210
Lot No.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
Note 1: Ensure that the channel temperature does not exceed 150C.
Note 2: a) Device mounted on a glass-epoxy board (a)
FR-4 25.4 x 25.4 x 0.8 (Unit: mm)
b)
Device mounted on a glass-epoxy board (b)
FR-4 25.4 x 25.4 x 0.8 (Unit: mm)
(a)
(b)
Note 3: a) b) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.). The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.).
Note 4: VDD = 16 V, Tch = 25C (initial), L = 1.0 mH, RG = 25 , IAR = 5 A Note 5: Repetitive rating; pulse width limited by max channel temperature. Note 6: on lower right of the marking indicates Pin 1. Weekly code: (Three digits)
Week of manufacture (01 for the first week of a year: sequential number up to 52 or 53) Year of manufacture (The last digit of a year)
2
2007-01-16
TPCS8210
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth Test Condition VGS = 10 V, VDS = 0 V VDS = 20 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -12 V VDS = 10 V, ID = 200 A VGS = 2.0 V, ID = 3.5 A Drain-source ON resistance RDS (ON) VGS = 2.5 V, ID = 3.5 A VGS = 4.0 V, ID = 4.0 A Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("miller") charge tf toff Qg Qgs1 Qgd VDD 16 V, VGS = 5 V, ID = 5 A - |Yfs| Ciss Crss Coss tr VGS ton ID = 2.5 A VOUT RL = 4 4.7 VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, ID = 2.5 A Min 20 8 0.5 4.6 Typ. 34 26 19 9.2 1280 130 150 4.5 11 7.3 33 15 3.3 3.5 Max 10 10 1.2 60 40 30 ns nC pF S m Unit A A V V
5V 0V
VDD 10 V - Duty < 1%, tw = 10 s =
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = 5 A, VGS = 0 V Min Typ. Max 20 -1.2 Unit A V
3
2007-01-16
TPCS8210
ID - VDS
5 2 43 4 10 1.9 1.8 1.7 8 432 1.9
ID - VDS
Common source Ta = 25C Pulse test 1.8 6 1.7 4 1.6 2 VGS = 1.4 V
Drain current ID (A)
3
1.6 2 1.5 1
Drain current ID (A)
Common source Ta = 25C Pulse test
1.5 VGS = 1.4 V
0 0
0.4
0.8
1.2
1.6
2.0
0 0
1
2
3
4
5
Drain-source voltage
VDS (V)
Drain-source voltage
VDS (V)
ID - VGS
10 Common source VDS = 10 V 8 2
VDS - VGS
Common source Common source Ta = 25C Ta = 25C
VDS (V)
Pulse test
1.6
Pulse test
Drain current ID (A)
6
1.2
4
Drain-source voltage
0.8 2.5 0.4 1.25 0 0
100 2
25 Ta = -55C
5 ID = 10 A
0 0
1
2
3
4
5
2
4
6
8
10
Gate-source voltage
VGS (V)
Gate-source voltage
VGS (V)
|Yfs| - ID
100 100
RDS (ON) - ID
(S)
50 30
50
Forward transfer admittance Yfs
Drain-source ON resistance RDS (ON) (m)
VGS = 2 V 2.5 4
Ta = -55C
30
25 100 10
10
5 3 Common source VDS = 10 V Common source Pulse test VDS = 10 V 1 10
5 3 Common source Ta = 25C Common source Pulse test Ta = 25C 1 10
1 0.1
1 0.1
Drain current ID (A)
Drain current ID (A)
4
2007-01-16
TPCS8210
RDS (ON) - Ta
60 VGS = 2.0 V 10 5 3 4 2
IDR - VDS
Drain-source ON resistance RDS (ON) (m)
2.5 ID = 5 A 1.25 VGS = 2.5 V
(A)
50
1 VGS = 0 V
40
30 ID = 5, 2.5, 1.25 A 20 ID = 5, 2.5, 1.25 A 10 Common source Pulse test 0 -50 0 50 100 150 VGS = 4.0 V
Drain reverse current IDR
1 0.5 0.3 Common source Ta = 25C Pulse test 0.1 0 -0.2 -0.4 -0.6 -0.8 -1
Ambient temperature Ta (C)
Drain-source voltage
VDS (V)
Capacitance - VDS
10000 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -100 1 10 100
Vth - Ta
Common source VDS = 10 V ID = 200 A Pulse test
(pF)
Ciss 1000
Coss 100 Crss Common source Ta = 25C f = 1MHz VGS = 0 V
Gate threshold voltage
Capacitance C
Vth (V)
-50
0
50
100
150
10 0.1
Ambient temperature Ta (C)
Drain-source voltage
VDS (V)
PD - Ta
1.2 (1)
Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b)
Dynamic input/output characteristics
30 Common source ID = 5 A Ta = 25C Pulse test 20 VDS = 16 V 15 VGS 8 12
Drain power dissipation PD (W)
VDS (V)
0.8
(2) (3)
Drain-source voltage
t = 10 s
0.6
6
0.4
(4)
10
4
0.2
5
2
0 0
50
100
150
200
0 0
4
8
12
16
20
24
28
0 32
Ambient temperature Ta (C)
Total gate charge Qg (nC)
5
2007-01-16
Gate-source voltage
VGS (V)
1
25
10
TPCS8210
rth - tw
1000
Device mounted on a glass-epoxy board (a) (Note 2a) 500 (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) 300 Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b)
(4) (3) (2) (1)
Normalized transient thermal impedance rth (C/W)
100
50 30
10 5 3
1 0.5 0.3 Single pulse 0.1 0.001 0.01 0.1 1 10 100 1000
Pulse width
tw
(S)
100 50 30 ID max (pulse) * 10
Single-device value at dual operation (Note 3b)
Drain current ID (A)
10 ms *
1 ms *
5 3 1 0.5 0.3 0.1 0.05 * Single pulse Ta = 25C 0.03 Curves must be derated linearly with increase in temperature. 0.01 0.01 0.03 0.1 0.3 1
VDSS max 3 10 30 100
Drain-source voltage
VDS (V)
6
2007-01-16
TPCS8210
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
7
2007-01-16

▲Up To Search▲

Price & Availability of TPCS821007

	To Download TPCS821007 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .